產(chǎn)品展示PRODUCTS
美國GPD銦鎵砷InGaAs光電探測(cè)器（0.5um-2.6um）
美國GPD銦鎵砷InGaAs光電探測(cè)器（0.5um-2.6um）
InGaAs探測(cè)器產(chǎn)品介紹
Paremeter | Active area（mm） | Cut off wavelength | A/W min. (typ.) | NEP W/ÖHz min. | Dark Current max. | Package |
LD-GAP500 | 05 | 1.7um | 0.95@1550nm | 0.8x10-14 | 30 @5V(nA) | TO46 |
LD-GAP1000 | 1 | 1.7um | 0.95@1550nm | 1x 10-14 | 100 @5V(nA) | TO46 |
LD-GAP2000 | 2 | 1.7um | 0.95@1550nm | 3 x10-14 | 200 @1V(nA) | TO5 |
LD-GAP3000 | 3 | 1.7um | 0.95@1550nm | 5 x10-14 | 500 (@1V(nA) | TO5 |
LD-GAP5000 | 5 | 1.7um | 0.95@1550nm | 28 x10-14 | 10mA(@0.3V(nA) | TO5 |
LD-GAP300-1.9 | 0.3 | 1.9um | 0.9/1.0 | 3 x10-14 | 0.1@1V(uA) | TO46 |
LD-GAP500-1.9 | 0.5 | 1.9um | 0.9/1.0 | 9 x10-14 | 0.9@1V(uA) | TO46 |
LD-GAP1000-1.9 | 1 | 1.9um | 0.9/1.0 | 0.13 x10-12 | 4@1V(uA) | TO46 |
LD-GAP2000-1.9 | 2 | 1.9um | 0.9/1.0 | 0.26x10-12 | 10@1V(uA) | TO5 |
LD-GAP3000-1.9 | 3 | 1.9um | 0.9/1.0 | 0.38 x10-12 | 22.5@1V(uA) | TO5 |
LD-GAP300-2.05 | 0.3 | 2.05um | 0.9/1.0 | 5.7 x10-14 | 0.5@1V(uA) | TO46 |
LD-GAP500-2.05 | 0.5 | 2.05um | 0.9/1.0 | 8.1 x10-14 | 1@1V(uA) | TO46 |
LD-GAP1000-2.05 | 1 | 2.05um | 0.9/1.0 | 23.4 x10-14 | 4@1V(uA) | TO46 |
LD-GAP2000-2.05 | 2 | 2.05um | 0.9/1.0 | 42.8 x10-14 | 10@1V(uA) | TO5 |
LD-GAP3000-2.05 | 3 | 2.05um | 0.95/1.1 | 90.7 x10-14 | 12@0.5V(uA) | TO5 |
LD-GAP300-2.2 | 0.3 | 2.2um | 0.9/1.0 | 0.14x10-12 | 1@1V(uA) | TO46 |
LD-GAP500-2.2 | 0.5 | 2.2um | 0.9/1.0 | 0.22x10-12 | 5@1V(uA) | TO46 |
LD-GAP1000-2.2 | 1 | 2.2um | 0.9/1.0 | 0.46x10-12 | 10@1V(uA) | TO46 |
LD-GAP2000-2.2 | 2 | 2.2um | 0.9/1.0 | 1.28 x10-12 | 40@1V(uA) | TO5 |
LD-GAP3000-2.2 | 3 | 2.2um | 0.9/1.0 | 2.87x10-12 | 100@1V(uA) | TO5 |
LD-GAP300-2.6 | 0.3 | 2.6um | 0.9/1.0 | 0.81x10-12 | 13@1V(uA) | TO46 |
LD-GAP500-2.6 | 0.5 | 2.6um | 0.9/1.0 | 1.43x10-12 | 20@0.5V(uA) | TO46 |
LD-GAP1000-2.6 | 1 | 2.6um | 0.9/1.0 | 2.03x10-12 | 80@0.5V(uA) | TO46 |
LD-GAP2000-2.6 | 2 | 2.6um | 1.0 | 3.31x10-12 | 320@0.5V(uA) | TO5 |
LD-GAP3000-2.6 | 3 | 2.6um | 1.0 | 5.74x10-12 | 500@0.5V(uA) | TO5 |
提供專業(yè)定制，封裝形式多樣，可根據(jù)客戶要求選擇封裝形式，并客戶可依據(jù)需求定制不同的封裝的產(chǎn)品以及可定制TE制冷產(chǎn)品。
美國GPD銦鎵砷InGaAs光電探測(cè)器（0.5um-2.6um）
Paremeter | Active area（mm） | Cut off wavelength | A/W min. (typ.) | NEP W/ÖHz min. | Dark Current max. | Package |
LD-GAP1000TE1 | 1 | 1.7um | 0.95/1.0 | 5.4x10-15 | 3@5V(nA) | TO5/TO37/TO8/TO66 |
LD-GAP2000TE1 | 2 | 1.1x10-14 | 20@2V(nA) | |||
LD-GAP3000TE1 | 3 | 1.1x10-14 | 50@2V(nA) | |||
LD-GAP5000TE1 | 5 | 2.4x10-14 | 100@0.1V(nA) | |||
LD-GAP1000TE1-2.05 | 1 | 2.05um | 0.9/1.0 | 5.4x10-14 | 500@1V(nA) |
TO5/TO37/TO8/TO66 |
LD-GAP2000TE1-2.05 | 2 | 1.3x10-13 | 1100@1V(nA) | |||
LD-GAP3000TE1-2.05 | 3 | 3.2x10-13 | 1360@1V(nA) | |||
LD-GAP1000TE1-2.2 | 1 | 2.2um | 0.9/1.0 | 1.6x10-13 | 1250@1V(nA) | TO5/TO37/TO8/TO66 |
LD-GAP2000TE1-2.2 | 2 | 1.1x10-12 | 5000@1V(nA) | |||
LD-GAP3000TE1-2.2 | 3 | 5.5x10-13 | 6250@0.5V(nA) | |||
LD-GAP1000TE1-2.6 | 1 | 2.6um | 0.9/1.0 | 6x10-13 | 8000@0.5V(nA) | TO5/TO37/TO8/TO66 |
LD-GAP2000TE1-2.6 | 2 | 9.8x10-13 | 32000@0.5V(nA) | |||
LD-GAP3000TE1-2.6 | 3 | 1.7x10-12 | 50000@0.5V(nA) | |||
LD-GAP1000TE2 | 1 | 1.7um | 0.95/1.0 | 3.7x10-15 | 2@5V(nA) | TO8/TO66 |
LD-GAP2000TE2 | 2 | 5.3x10-15 | 10@2V(nA) | |||
LD-GAP3000TE2 | 3 | 7.5x10-15 | 20@2V(nA) | |||
LD-GAP5000TE2 | 5 | 1.7x10-14 | 50@0.1V(nA) | |||
LD-GAP1000TE2-2.05 | 1 | 2.05um | 0.9/1.0 | 3.7x10-14 | 200@1V(nA) |
TO8/TO66 |
LD-GAP2000TE2-2.05 | 2 | 9.6x10-14 | 240@1V(nA) | |||
LD-GAP3000TE2-2.05 | 3 | 2x10-13 | 700@0.5V(nA) | |||
LD-GAP1000TE2-2.2 | 1 | 2.2um | 0.9/1.0 | 1.2x10-13 | 700@1V(nA) | TO8/TO66 |
LD-GAP2000TE2-2.2 | 2 | 2.9x10-13 | 2900@1V(nA) | |||
LD-GAP3000TE2-2.2 | 3 | 4.1x10-13 | 3600@0.5V(nA) | |||
LD-GAP1000TE2-2.6 | 1 | 2.6um | 0.9/1.0 | 4x10-13 | 3600@0.5V(nA) | TO8/TO66 |
LD-GAP2000TE2-2.6 | 2 | 6.5x10-13 | 14500@0.5V(nA) | |||
LD-GAP3000TE2-2.6 | 3 | 1.1x10-12 | 22700@0.5V(nA) |
